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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION *With TO-220C package *High speed switching *High reliability APPLICATIONS *Switching regulators *Ultrasonic generators *High frequency inverters *General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 5 1.5 40 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=25mA ; IB=0 IC=100A ; IE=0 IE=100A ; IC=0 IC=2A; IB=0.8A IC=2A; IB=0.8A VCB=250V ;IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V 20 MIN 200 250 7 2SC2767 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 0.2 1.0 10 100 80 V V A A Switching times ton tstg tf Turn-on time Storage time Fall time IC=4A; IB1=-IB2=-0.4A RL=20@ 1.0 2.0 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2767 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2767 4 |
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